Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr3SnO. Issue 34 (14th July 2020)

• Record Type: Journal Article
• Authors: Ma, Yanjun; Edgeton, Anthony; Paik, Hanjong; Faeth, Brendan D.; Parzyck, Christopher T.; Pamuk, Betül; Shang, Shun‐Li; Liu, Zi‐Kui; Shen, Kyle M.; Schlom, Darrell G.; Eom, Chang‐Beom
• Is Part Of: Advanced materials. Volume 32:Issue 34(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-07-14
• Subjects: angle‐resolved photoemission spectroscopy -- molecular beam epitaxy -- topological crystalline insulators; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202000809
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Topological materials are derived from the interplay between symmetry and topology. Advances in topological band theories have led to the prediction that the antiperovskite oxide Sr3 SnO is a topological crystalline insulator, a new electronic phase of matter where the conductivity in its (001) crystallographic planes is protected by crystallographic point group symmetries. Realization of this material, however, is challenging. Guided by thermodynamic calculations, a deposition approach is designed and implemented to achieve the adsorption‐controlled growth of epitaxial Sr3 SnO single‐crystal films by molecular‐beam epitaxy (MBE). In situ transport and angle‐resolved photoemission spectroscopy measurements reveal the metallic and electronic structure of the as‐grown samples. Compared with conventional MBE, the used synthesis route results in superior sample quality and is readily adapted to other topological systems with antiperovskite structures. The successful realization of thin films of Sr3 SnO opens opportunities to manipulate topological states by tuning symmetries via strain engineering and heterostructuring. Abstract : Epitaxial thin films of the candidate topological crystalline insulator Sr3 SnO are realized by adsorption‐controlled molecular‐beam epitaxy. In situ angle‐resolved photoemission spectroscopy demonstrates that the bulk electronic structure closely matches the predicted band structure. This research opens opportunities to investigate and manipulate topological states by tuning symmetries via strain engineering and heterostructuring.