Cite
HARVARD Citation
Matsugi, A. et al. (2020). Gas-phase reaction mechanism in chemical dry etching using NF3 and remotely discharged NH3/N2 mixture. RSC advances. 10 (51), pp. 30806-30814. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Matsugi, A. et al. (2020). Gas-phase reaction mechanism in chemical dry etching using NF3 and remotely discharged NH3/N2 mixture. RSC advances. 10 (51), pp. 30806-30814. [Online].