Cite
HARVARD Citation
Shi, L. et al. (2020). Prediction of high carrier mobility for a novel two-dimensional semiconductor of BC6N: first principles calculations. Journal of materials chemistry. 8 (17), pp. 5882-5893. [Online].
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Shi, L. et al. (2020). Prediction of high carrier mobility for a novel two-dimensional semiconductor of BC6N: first principles calculations. Journal of materials chemistry. 8 (17), pp. 5882-5893. [Online].