Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility. Issue 3 (28th November 2019)

• Record Type: Journal Article
• Authors: Jannat, Azmira; Yao, Qifeng; Zavabeti, Ali; Syed, Nitu; Zhang, Bao Yue; Ahmed, Taimur; Kuriakose, Sruthi; Mohiuddin, Md; Pillai, Naresh; Haque, Farjana; Ren, Guanghui; Zhu, De Ming; Cheng, Ningyan; Du, Yi; Tawfik, Sherif Abdulkader; Spencer, Michelle J. S.; Murdoch, Billy J.; Wang, Lan; McConville, Chris F.; Walia, Sumeet; Daeneke, Torben; Zhu, Lianqing; Ou, Jian Zhen
• Is Part Of: Materials horizons. Volume 7:Issue 3(2020)
• Page Start: 827
• Page End: 834
• Publication Date: 2019-11-28
• Subjects: Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9mh01365b
• Languages: English
• ISSNs: 2051-6347

Abstract

Abstract : The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In2 S3 facilitates excellent electronic performance. Abstract : Metal chalcogenides are important members of the two-dimensional (2D) materials family and have been extensively investigated for high-performance electronic device applications. However, when they are produced on a large-scale, their carrier mobilities are strongly influenced by the surface conditions. Here, we print indium sulphide (In2 S3 ) with the thickness down to the single unit cell limit on wafer-scale out of metallic indium liquid, in which structural indium vacancies are formed in an orderly fashion. First principles investigations reveal that the unique ordered-vacancy structure results in a highly dispersive conduction band with low effective electron mass, forming multiple band-like electronic transport channels sandwiched within the crystal structure which are less influenced by the surface conditions. Back-gated field effect transistors are fabricated, and the measured mobility is up to 58 cm 2 V −1 s −1 with a high degree of reproducibility, which is amongst one of the highest reported for wafer-scale-grown ultra-thin metal chalcogenides. This establishes ordered-vacancy-enabled semiconductors in the 2D geometry as suitable alternatives for new generation high-performance electronic devices.