Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures. Issue 23 (5th June 2020)

• Record Type: Journal Article
• Authors: Zheng, Wanchao; Wang, Yuchen; Jin, Chao; Yin, Ruihua; Li, Dong; Wang, Ping; Liu, Shasha; Wang, Xinyue; Zheng, Dongxing; Bai, Haili
• Is Part Of: Physical chemistry chemical physics. Volume 22:Issue 23(2020)
• Page Start: 13277
• Page End: 13284
• Publication Date: 2020-06-05
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d0cp00124d
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : The resistive switching behavior in the Pt/Fe/BiFeO3 /SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3 /SrRuO3 interface. Abstract : BiFeO3 (BFO)-based heterostructures have been widely studied to develop high-speed, high-density and low-consumption nonvolatile memory. In this study, the resistive switching (RS) behavior in metal/BFO/SrRuO3 (SRO) heterostructures was investigated. The I–V curves of Pt/Fe/BFO/SRO and Pt/BFO/SRO heterostructures demonstrate that the RS behavior in the Pt/Fe/BFO/SRO heterostructures results from the fact that ferroelectric polarization modulated the depletion layer width around the BFO/SRO interface. According to the fitting results of the I–V curves, the conductivity mechanisms are the interface-limited Fowler–Nordheim tunneling mechanism in the negative bias and the space-charge-limited conduction mechanism in the positive bias. Compared with the memory performance in the Pt/BFO/SRO heterostructures, the memory performance in the Pt/Fe/BFO/SRO heterostructures evidently improved. The Fe layer with a work function similar to that of the BFO layer can decrease the barrier height and reduce the accumulation of the injected charges at the top-electrode/BFO interface, which further improves the ferroelectric performance of the BFO layer.