Synthesis and characterization of high-purity SnO2(ZnO:Sn)m superlattice nanowire arrays with broad-spectrum emissions. Issue 32 (31st July 2020)

• Record Type: Journal Article
• Authors: Tan, Jianing; Jiang, Song; Ge, Binghui; Xu, Bojia; Cao, Baobao
• Is Part Of: CrystEngComm. Volume 22:Issue 32(2020)
• Page Start: 5355
• Page End: 5362
• Publication Date: 2020-07-31
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/d0ce00889c
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : High purity SnO2 (ZnO:Sn) m nanowire arrays growth has been realized for the first time since it was discovered in 2012, displaying an interesting white light emission in the range of around 380–570 nm though having major structural frame of ZnO. Abstract : SnO2 (ZnO:Sn) m is a new phase recently found in the diagram of a ZnO–SnO2 binary system in the form of a one-dimensional nanowire, which is a new group of superlattice oxide besides the widely known M2 O3 (ZnO) m (M = trivalent elements, such as In, Ga, and Al, and m = integer). Thereafter, more comprehensive structural and physical properties of SnO2 (ZnO:Sn) m are still quite lacking due to the difficulties in high purity synthesis. In this study, we demonstrate a rational design for the growth of SnO2 (ZnO:Sn) m superlattice nanowire arrays using a home-built double-tube chemical vapor deposition (CVD) system for the first time. The atomic microstructure of the nanowire array was investigated by Cs-corrected scanning transmission electron microscopy (STEM), and a phenomenon of unsaturated Sn occupation in Sn–O octahedral layers was observed. Two new vibrational modes at 276 cm −1 and 698 cm −1 were found in Raman measurement. The photoluminescence (PL) spectrum of SnO2 (ZnO:Sn) m superlattice nanowires displays an interesting broad-spectrum emission in the range of around 380–570 nm. Kelvin probe force microscopy reveals that the average work function of SnO2 (ZnO:Sn) m nanowires is in the range of 4.05–4.32 eV.