A hydrothermally synthesized MoS2(1−x)Se2x alloy with deep-shallow level conversion for enhanced performance of photodetectors. Issue 5 (29th April 2020)

• Record Type: Journal Article
• Authors: Hou, Kaiqiang; Huang, Zongyu; Liu, Shengqian; Liao, Gengcheng; Qiao, Hui; Li, Hongxing; Qi, Xiang
• Is Part Of: Nanoscale advances. Volume 2:Issue 5(2020)
• Page Start: 2185
• Page End: 2191
• Publication Date: 2020-04-29
• Subjects: 620.5
• DOI: 10.1039/d0na00202j
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : Schematic diagram of MoS2(1− x ) Se2 x synthesis and schematic diagram of device preparation. Abstract : Photoelectric detectors based on binary transition metal chalcogenides have attracted widespread attention in recent years. However, due to the high-temperature synthesis of binary TMD, high-density deep-level defect states may be generated, leading to poor responsiveness or a long response time. Besides, the addition of an alloy will change the DLDSs from deep to shallow energy levels caused by S vacancies. In this paper, MoS2(1− x ) Se2 x nanostructures were synthesized by a hydrothermal method, and a novel type of photodetector was fabricated by using the synthesized material as a light sensitive material. The MoSSe-based photodetector not only has a high photocurrent, but also exhibits a wide spectral response in the range of 405 nm to 808 nm. At the same time, it can achieve a responsivity of 1.753 mA W −1 under 660 nm laser irradiation of 1.75 mW mm −2 . Therefore, this work can be considered as a method of constructing a new type of photodetector with a simple process and low cost.