Hysteresis in graphene nanoribbon field-effect devices. Issue 10 (27th February 2020)

• Record Type: Journal Article
• Authors: Tries, Alexander; Richter, Nils; Chen, Zongping; Narita, Akimitsu; Müllen, Klaus; Wang, Hai I.; Bonn, Mischa; Kläui, Mathias
• Is Part Of: Physical chemistry chemical physics. Volume 22:Issue 10(2020)
• Page Start: 5667
• Page End: 5672
• Publication Date: 2020-02-27
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d0cp00298d
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Defects in the oxide layer are the main cause for hysteresis in graphene nanoribbon FETs. Abstract : Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.