A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection. Issue 18 (27th April 2020)

• Record Type: Journal Article
• Authors: Cao, Lin-An; Yao, Ming-Shui; Jiang, Hui-Jie; Kitagawa, Susumu; Ye, Xiao-Liang; Li, Wen-Hua; Xu, Gang
• Is Part Of: Journal of materials chemistry. Volume 8:Issue 18(2020)
• Page Start: 9085
• Page End: 9090
• Publication Date: 2020-04-27
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d0ta01379j
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode. Abstract : The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal–organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier ( Φ B ). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on–off ratio (∼10 3 ) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors.