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HARVARD Citation
Kim, H. et al. (2020). A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation. Nanoscale. 12 (14), pp. 7641-7650. [Online].
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Kim, H. et al. (2020). A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation. Nanoscale. 12 (14), pp. 7641-7650. [Online].