Cite
HARVARD Citation
Narumi, T. et al. (2020). 3C–, 4H–, and 6H–SiC crystal habitus and interfacial behaviours in high temperature Si-based solvents. CrystEngComm. 22 (20), pp. 3489-3496. [Online].
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Narumi, T. et al. (2020). 3C–, 4H–, and 6H–SiC crystal habitus and interfacial behaviours in high temperature Si-based solvents. CrystEngComm. 22 (20), pp. 3489-3496. [Online].