Cite
HARVARD Citation
Xu, P. et al. (2020). Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors. RSC advances. 10 (27), pp. 16071-16078. [Online].
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Xu, P. et al. (2020). Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors. RSC advances. 10 (27), pp. 16071-16078. [Online].