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HARVARD Citation
Chen, K. et al. (2020). ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT. RSC advances. 10 (17), pp. 9902-9906. [Online].
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Chen, K. et al. (2020). ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT. RSC advances. 10 (17), pp. 9902-9906. [Online].