Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template. Issue 4 (23rd March 2020)

• Record Type: Journal Article
• Authors: Johar, Muhammad Ali; Kim, Taeyun; Song, Hyun-Gyu; Waseem, Aadil; Kang, Jin-Ho; Hassan, Mostafa Afifi; Bagal, Indrajit V.; Cho, Yong-Hoon; Ryu, Sang-Wan
• Is Part Of: Nanoscale advances. Volume 2:Issue 4(2020)
• Page Start: 1654
• Page End: 1665
• Publication Date: 2020-03-23
• Subjects: 620.5
• DOI: 10.1039/d0na00115e
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template and their optical characterizations are also conducted. Abstract : We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template. The patterned Si nanowire-template is fabricated using metal-assisted chemical-etching, and the conformal growth of the GaN/InGaN multiple-quantum-well (MQW) coaxial nanowires is conducted using metal–organic-chemical-vapor-deposition by the two-step growth approach of vapor–liquid–solid for the GaN core and vapor–solid for the GaN/InGaN MQW shells. The growth directions of the GaN nanowires are confirmed by transmission electron microscopy and selected area electron diffraction patterns. The emission of the GaN/InGaN MQW nanowire is tuned from 440 nm to 505 nm by increasing the InGaN quantum-well thickness. The carrier dynamics were evaluated by performing temperature-dependent time-resolved photoluminescence measurement, and the radiative lifetime of photogenerated electron–hole pairs was found to range from 30 to 35 ps. A very high IQE of 56% was measured due to the suppressed quantum-confined Stark effect which was enabled by the semi-polar growth facet of the GaN/InGaN MQWs. The demonstration of the growth of the hybrid 3-D hierarchical GaN/InGaN MQW nanowires provides a seamless platform for a broad range of multifunctional optical and electronic applications.