Carrier polarity modulation of molybdenum ditelluride (MoTe2) for phototransistor and switching photodiode applications. Issue 29 (16th July 2020)

• Record Type: Journal Article
• Authors: Aftab, Sikandar; Samiya, ; Rabia, ; Yousuf, Saqlain; Khan, Muhammad Usman; Khawar, Rafia; Younus, Ayesha; Manzoor, Mumtaz; Iqbal, Muhammad Waqas; Iqbal, Muhammad Zahir
• Is Part Of: Nanoscale. Volume 12:Issue 29(2020)
• Page Start: 15687
• Page End: 15696
• Publication Date: 2020-07-16
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d0nr03904g
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : p–n Diodes showed a sound self-biased photovoltaic behavior upon light illumination and also achieved V OC switching behavior at the p–n diode state by switching on and off the light. Abstract : Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe2 ) for the development of phototransistors and switching photodiodes. Initially, we treated p-MoTe2 in a N2 environment under DUV irradiation and found that the p-type MoTe2 changed to n-type MoTe2 . However, the treated devices exhibited environmental stability over a long period of 60 days. Kelvin probe force microscopy (KPFM) measurements demonstrated that the values of the work function for p-MoTe2 and n-MoTe2 were ∼4.90 and ∼4.49 eV, respectively, which confirmed the carrier tunability. Also, first-principles studies were performed to confirm the n-type carrier polarity variation. Interestingly, the n-type MoTe2 reversed its polarity to p-type after the irradiation of the devices under DUV in an O2 environment. Additionally, a lateral homojunction-based p–n diode of MoTe2 with a rectification ratio of ∼2.5 × 10 4 was formed with the value of contact potential difference of ∼400 mV and an estimated fast rise time of 29 ms and decay time of 38 ms. Furthermore, a well self-biased photovoltaic behavior upon illumination of light was achieved and various photovoltaic parameters were examined. Also, V OC switching behavior was established at the p–n diode state by switching on and off the incident light. We believe that this efficient and facile carrier polarity modulation technique may pave the way for the development of phototransistors and switching photodiodes in advanced nanotechnology.