The structural, electrical and optical properties of spark plasma sintered BaSn1-xSbxO3 ceramics. Issue 15 (December 2020)

• Record Type: Journal Article
• Authors: Vukašinović, Jelena; Počuča-Nešić, Milica; Golić, Danijela Luković; Ribić, Vesna; Branković, Zorica; Savić, Slavica M.; Dapčević, Aleksandra; Bernik, Slavko; Podlogar, Matejka; Kocen, Matej; Rapljenović, Željko; Ivek, Tomislav; Lazović, Vladimir; Dojčinović, Biljana; Branković, Goran
• Is Part Of: Journal of the European Ceramic Society. Volume 40:Issue 15(2020)
• Page Start: 5566
• Page End: 5575
• Publication Date: 2020-12
• Subjects: BaSnO3 -- Spark plasma sintering -- Potential barrier -- Low angle grain boundaries -- Electrical conductivity; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2020.06.062
• Languages: English
• ISSNs: 0955-2219

Abstract

Highlights: Low Angle Grain Boundaries (LAGBs) present in Spark plasma sintered Sb-doped BaSnO3 . Loss of potential barrier at LAGBs drastically decreased electrical resistivity. Doping of BaSnO3 with Sb led to linearization of I - U characteristic. BaSn0.92 Sb0.08 O3 can be used as linear resistor even at higher temperatures. Abstract: Antimony doped barium-stannate dense ceramic materials were synthesized using spark plasma sintering technique out of mechanically activated precursor powders. The influence of various Sb concentrations ( x = 0.00 – 0.10) on properties of BaSn1- x Sb x O3 ceramics was investigated. Relative densities of prepared samples were in the range of (79–96) %. TEM analysis revealed the presence of many dislocations in undoped BaSnO3, and their significant reduction upon doping with Sb. All samples except BaSn0.92 Sb0.08 O3 exhibit non-linear I-U characteristic, typical for semiconductors with potential barrier at grain boundaries. Low angle grain boundaries found only in BaSn0.92 Sb0.08 O3 caused the loss of potential barrier at grain boundaries which was confirmed by AC impedance spectroscopy measurements. Consequently, BaSn0.92 Sb0.08 O3 showed the lowest electrical resistivity and linear I-U characteristic. UV–vis analysis confirmed the increasing of band gap (Burstein–Moss shift) values in all doped samples.