Extraction and Analysis of the Characteristic Parameters in Back‐to‐Back Connected Asymmetric Schottky Diode. Issue 8 (26th February 2020)

• Record Type: Journal Article
• Authors: Wang, Zuo; Zang, Wanyu; Shi, Yeming; Zhu, Xingyu; Rao, Gaofeng; Wang, Yang; Chu, Junwei; Gong, Chuanhui; Gao, Xiuying; Sun, Hui; Huanglong, Sibo; Yang, Dingyu; Wangyang, Peihua
• Is Part Of: Physica status solidi. Volume 217:Issue 8(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-26
• Subjects: barrier height -- ideality factor -- Schottky devices -- series resistance -- thermionic emission theory; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201901018
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The physical Schottky parameters of devices based on Schottky contact are important to analyze the working mechanism. This article theoretically studies the parameter characteristics of the current–voltage curve of two back‐to‐back connected Schottky contacts via the thermionic emission model, and it is found that not all the parameters are able to be extracted under some constraints. Compared with some classical extraction methods, a straightforward strategy to approach the Schottky intrinsic parameters by solving equations during the characteristic interval are presented. In addition, this method is verified on several representative standard curves and experimental curves, and the extracted parameters are highly compatible with those curves. The current extraction method will be of great significance for the design and preparation of Schottky‐based devices. Abstract : The characteristic parameters of the Schottky diode appear essential to evaluate the properties of electronic devices. This article emphasizes not all parameters can be extracted under some constraints. A straightforward strategy to approach the Schottky intrinsic parameters by solving equations during characteristic interval is presented and verified. The extraction method will be of great significance for electron device.