Dopant‐Free Back‐Contacted Silicon Solar Cells with an Efficiency of 22.1%. Issue 4 (16th January 2020)

• Record Type: Journal Article
• Authors: Wu, Weiliang; Lin, Wenjie; Zhong, Sihua; Paviet-Salomon, Bertrand; Despeisse, Matthieu; Jeangros, Quentin; Liang, Zongcun; Boccard, Mathieu; Shen, Hui; Ballif, Christophe
• Is Part Of: Physica status solidi. Volume 14:Issue 4(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-16
• Subjects: back contacts -- dopant‐free contacts -- electron-selective contacts -- multilayer films -- silicon solar cells; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201900688
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Contact recombination at the interface between the selective contact material and electrode interface is one of the most pressing issues limiting most photovoltaic technologies. The results indicate that the high work function of the capping contact metal electrode has a negative influence on MgF x /Mg as the electron‐selective contact. Although the exact mechanism is still unclear, low‐work function metals appear to perform better. The contact stacks devised with these novel insights (1.5 nm MgF x /20 nm Mg/100 nm Al) and MoO x are applied as well to dopant‐free multilayer back‐contact (MLBC) solar cells to achieve an efficiency of 22.1% with an aperture area of 4.5 cm 2 by directional evaporation for patterning. Abstract : The influence of the metal capping layer on MgF x /Mg electron‐selective contact stacks is shown. A significant efficiency improvement of 22.1% is reported on dopant‐free silicon solar cells. A method on the fabrication procedure of interdigitated back‐contact (IBC) silicon solar cells is shown that substantially simplifies the fabrication of dopant‐free back‐contacted silicon solar cells.