Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation. Issue 8 (27th April 2020)

• Record Type: Journal Article
• Authors: Lehninger, David; Olivo, Ricardo; Ali, Tarek; Lederer, Maximilian; Kämpfe, Thomas; Mart, Clemens; Biedermann, Kati; Kühnel, Kati; Roy, Lisa; Kalkani, Mahsa; Seidel, Konrad
• Is Part Of: Physica status solidi. Volume 217:Issue 8(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-04-27
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202070030
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Hafnium Zirconium Oxide Films So far, the ferroelectric phase of prior amorphous hafnium zirconium oxide (HZO) films is achieved by using rapid thermal annealing. In article number 1900840 by David Lehninger and co‐workers, it is shown that a dedicated annealing step is not needed for the integration of ferroelectric HZO films into the back‐end‐of‐line of integrated circuits. A furnace anneal given by the thermal budget during interconnect‐formation is sufficient to functionalize even ultrathin 5 nm HZO films. This result will help to optimize the integration flow, which saves process time and fabrication costs.