Substrate temperature influenced ZrO2 films for MOS devices. (28th March 2020)

• Record Type: Journal Article
• Authors: Kondaiah, Paruchuri; Jagadeesh Chandra, S.V.; Fortunato, Elvira; Chel Jong, Choi; Mohan Rao, G.; Koti Reddy, D.V. Rama; Uthanna, S.
• Is Part Of: Surface and interface analysis. Volume 52:Number 9(2020)
• Page Start: 541
• Page End: 546
• Publication Date: 2020-03-28
• Subjects: conduction mechanism -- dielectric constant -- high‐k -- interface engineering -- leakage current -- sputtering; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6775
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : The effect of substrate temperature on the direct current magnetron‐sputtered zirconium oxide (ZrO2 ) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 × 10 −2 Pa. X‐ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal‐oxide‐semiconductor devices were fabricated on ZrO2 /Si stacks with Al gate electrode. The dielectric properties of ZrO2 layer and interface quality at ZrO2 /Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10 −7 to 0.64 × 10 −9 A cm −2 with the increase of substrate temperature from 303 to 673 K.