Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy. Issue 209 (23rd July 2020)

• Record Type: Journal Article
• Authors: Li, Chenglin; Fang, Dan; Gu, Kaihui; Lv, Dong; Fang, Xuan; Tang, Jilong; Wang, Dengkui; Lin, Fengyuan; Wang, Xiaohua
• Is Part Of: Integrated ferroelectrics. Issue 209(2020)
• Page Start: 162
• Page End: 170
• Publication Date: 2020-07-23
• Subjects: Homoepitaxial -- molecular beam epitaxy -- GaSb films -- growth rate -- V/ III flux; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2020.1728826
• Languages: English
• ISSNs: 1058-4587

Abstract

Abstract: Molecular Beam Epitaxy (MBE) was used to grow GaSb thin films on GaSb substrates. We have obtained the optimized growth condition to improve films quality and the surface morphology of GaSb epilayer during growth. Two group samples were tested to study the influence of the growth rate and the V/III flux ratios on the crystal quality. It caused fewer defects when the growth rate of approximately was fixed 0.6 ML/s. And the surface morphology and performance was best for GaSb epilayer when the beam ratio was 5. The thin films were characterized by Atomic Force Microscopy (AFM) and high-resolution X-Ray Diffraction (XRD). The root means square roughness of the superlattice surface was only 0.335 nm. The full width at half maximum of the rocking curve was 39.6 arcsec and the emission wavelength of photoluminescence was 1.99 μm.