Zero relaxation time limits to isothermal hydrodynamic model for semiconductor. (November 2020)

• Record Type: Journal Article
• Authors: Xue, Changfeng; Klingenberg, Christian; Lu, Yun-guang; Zhang, Jin-jun
• Is Part Of: Applied mathematics letters. Volume 109(2020)
• Publication Date: 2020-11
• Subjects: Relaxation limit -- Isothermal Euler–Poisson equations -- Vanishing viscosity -- Flux approximation; Applied mathematics -- Periodicals; 519.05
• DOI: 10.1016/j.aml.2020.106528
• Languages: English
• ISSNs: 0893-9659

Abstract

Abstract: In this paper, we remove the bounded total variation condition on the initial data and the restriction of the concentration of a fixed background charge being a constant in the paper "Relaxation of the Isothermal Euler–Poisson System to the Drift-Diffusion Equations, " (Quart. Appl. Math., 58 (2000), 511–521), and obtain the zero relaxation time limits to isothermal hydrodynamic model for semiconductor by using the varying viscosity method.