Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure. (September 2020)

• Record Type: Journal Article
• Authors: Cao, Xue-Li; Liu, Gui-Xiang; Tang, Ge; Ma, Wen-Yue
• Is Part Of: Vacuum. Volume 179(2020)
• Publication Date: 2020-09
• Subjects: Hybrid magnetic-electric-barrier semiconductor microstructure -- SOC -- Spin polarization -- Spin filter; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2020.109405
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: We theoretically study spin-polarized transport induced by spin-orbit coupling (SOC) as well as the Zeeman interaction for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure, which is constructed on surface of GaAs/Alx Ga1-x As heterostructure by patterning a ferromagnetic stripe and a Schottky-metal stripe in parallel configuration. Electron-spin polarization is found to originate mainly from spin-orbit coupling. Spin polarization can be manipulated by adjusting Rashba or Dresselhause-SOC strength, which may result into a tunable spin filter for spintronics devices. Highlights: Spin-polarized transport is investigated in a hybrid MEB semiconductor microstructure. Spin polarization results mainly from spin-orbit coupling. Degree of spin polarization can be tuned by changing spin-orbit coupling strength. This semiconductor microstructure can be used as a controllable spin filter.