New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties. (9th June 2020)
- Record Type:
- Journal Article
- Title:
- New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties. (9th June 2020)
- Main Title:
- New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties
- Authors:
- Sun, Yuanhui
Li, Yawen
Li, Tianshu
Biswas, Koushik
Patanè, Amalia
Zhang, Lijun - Abstract:
- Abstract: The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first‐principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3 d are identified, distinct from well‐known polymorphs based on the D 3 h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X‐ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed. Abstract : New polymorphs of 2D semiconductor indium selenide, which consist of the monolayer with different symmetry, are discovered by artificial intelligence‐based computational material design. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to theAbstract: The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first‐principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3 d are identified, distinct from well‐known polymorphs based on the D 3 h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X‐ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed. Abstract : New polymorphs of 2D semiconductor indium selenide, which consist of the monolayer with different symmetry, are discovered by artificial intelligence‐based computational material design. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. … (more)
- Is Part Of:
- Advanced functional materials. Volume 30:Number 31(2020)
- Journal:
- Advanced functional materials
- Issue:
- Volume 30:Number 31(2020)
- Issue Display:
- Volume 30, Issue 31 (2020)
- Year:
- 2020
- Volume:
- 30
- Issue:
- 31
- Issue Sort Value:
- 2020-0030-0031-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2020-06-09
- Subjects:
- 2D materials -- electronics and optoelectronics -- indium selenide -- materials by design
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202001920 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 13721.xml