Effect of Aluminum Doping on the Performance and Microstructure of Methyl-Modified SiO2 Sol. Issue 207 (3rd May 2020)
- Record Type:
- Journal Article
- Title:
- Effect of Aluminum Doping on the Performance and Microstructure of Methyl-Modified SiO2 Sol. Issue 207 (3rd May 2020)
- Main Title:
- Effect of Aluminum Doping on the Performance and Microstructure of Methyl-Modified SiO2 Sol
- Authors:
- Yang, Jing
Xu, Zhirun
Mu, Ruihua
Zhao, Yamei
Li, Bo
Hou, Haiyun - Abstract:
- Abstract: With methyltriethoxysilane as hydrophobic precursors and aluminum isopropoxide as the aluminum source, the Al2 O3 /SiO2 sols and their gel materials were prepared. The effects of aluminum content ( nAl ) on the viscosity ( η ), density ( ρ ), reaction rate constant ( k ), Gibbs energies of activation for viscous flow ( ΔG *), particle size of Al2 O3 /SiO2 sols were studied. And the high temperature calcined materials were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Scanning electron microscopy (SEM). The results show that, with the increase of nAl, the η, n and ΔG * values of the Al2 O3 /SiO2 sols decrease while the k and ρ values and average particle sizes increase. There is strong intermolecular interaction between the Al2 O3 and SiO2 sol molecules. The Al-O-Si bond exists in the Al2 O3 /SiO2 materials before and after calcination at 350 °C. Calcination at 350 °C in N2 atmosphere can change the phase structure of Al2 O3 /SiO2 sample greatly, which can make the γ -AlOOH in the Al2 O3 /SiO2 gel material convert to γ -Al2 O3 through dehydration.
- Is Part Of:
- Integrated ferroelectrics. Issue 207(2020)
- Journal:
- Integrated ferroelectrics
- Issue:
- Issue 207(2020)
- Issue Display:
- Volume 207, Issue 207 (2020)
- Year:
- 2020
- Volume:
- 207
- Issue:
- 207
- Issue Sort Value:
- 2020-0207-0207-0000
- Page Start:
- 220
- Page End:
- 230
- Publication Date:
- 2020-05-03
- Subjects:
- Sol-gel method -- Al2O3/SiO2 sol -- Gibbs energies of activation for viscous flow -- Particle size distribution
Ferroelectric devices -- Periodicals
Integrated circuits -- Periodicals
537.244805 - Journal URLs:
- http://www.tandfonline.com/toc/ginf20/current ↗
http://informaworld.com/openurl?genre=journal&issn=1058-4587 ↗
http://www.tandfonline.com/ ↗
http://firstsearch.oclc.org/journal=1058-4587;screen=info;ECOIP ↗ - DOI:
- 10.1080/10584587.2020.1728682 ↗
- Languages:
- English
- ISSNs:
- 1058-4587
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 4531.815700
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 13695.xml