Temperature effect and compensation scheme for tunable ultra-high-resistance pseudo resistor. (August 2020)

• Record Type: Journal Article
• Authors: Mohamed, Ahmed Reda; Wang, Guoxing
• Is Part Of: Microelectronics journal. Volume 102(2020)
• Publication Date: 2020-08
• Subjects: Integrated circuit -- Tunable pseudo-resistor -- Temperature compensation scheme -- Chip fabrication and measurement; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2020.104820
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: Pseudo resistors with ultra-high resistance implemented using MOSFETS are employed in a wide range of biomedical applications. However, their resistances are highly dependent on temperature. A gate-voltage-controlled pseudo resistor is proposed to compensate the temperature impact through trimming. Simplified models have been proposed for analyzing the pseudo resistor, and a linear trimming scheme is proposed. The proposed tunable pseudo resistor is fabricated and measured in standard 0.35 μm CMOS technology. Experimental results demonstrated that tuning could adequately compensate the temperature-induced resistance variation by 8.75x and provide relatively low-temperature dependence.