Analysis and design of a reconfigurable wideband I/Q modulator and Ultra-Wideband I/Q demodulator for multi-standard applications. (August 2020)
- Record Type:
- Journal Article
- Title:
- Analysis and design of a reconfigurable wideband I/Q modulator and Ultra-Wideband I/Q demodulator for multi-standard applications. (August 2020)
- Main Title:
- Analysis and design of a reconfigurable wideband I/Q modulator and Ultra-Wideband I/Q demodulator for multi-standard applications
- Authors:
- Mansour, Marwa
Zekry, Abdelhalim
Ali, Mohammed K.
Shawkey, Heba - Abstract:
- Abstract: This work presents an Ultra-Wideband (UWB) in-phase/quadrature (I/Q) demodulator, and a reconfigurable wideband (I/Q) modulator using 130 nm CMOS process for multi-standard applications. The proposed designs are suitable for multi-band or wideband LTE RF transceiver. Both the RF stage in the demodulator, and the IF stage in the modulator are implemented using Capacitive Cross Coupling (CCC) common-gate configuration to enhance bandwidth and increase gain at a moderate power consumption. Furthermore, the reconfigurability of the modulator is achieved by matching the RF port by means of a high coupling wideband five ports transformer and a bank of switched capacitors for proper channel selection. The demodulator consumes 10.5 mW from a 1.2 V supply and it has conversion gain (CG) of 10 dB with 3-dB bandwidth of 9 GHz (1–10 GHz). The demodulator input 1-dB compression point (P1dB) is −4.15 dBm at 4.5 GHz, and the LO-to-RF isolation is better than −45 dB due to compact and fully symmetrical layout where the active area is 0.22 m m 2 . The modulator demonstrates a CG of 6.8 ± 1.5 dB in the frequency band 1.5–4 GHz, where the maximum CG equals 8.32 dB at LO power of 3 dBm, and output 1 dB compression point (OP_1 dB) equals −1.6 dBm. Also, the LO suppression and the harmonic suppression in the modulator are less than −50 dBc, and −60 dBc, respectively. The modulator active area is 0.55 m m 2 and its power consumption is 16.6 mW from a 1.2 V supply.
- Is Part Of:
- Microelectronics journal. Volume 102(2020)
- Journal:
- Microelectronics journal
- Issue:
- Volume 102(2020)
- Issue Display:
- Volume 102, Issue 2020 (2020)
- Year:
- 2020
- Volume:
- 102
- Issue:
- 2020
- Issue Sort Value:
- 2020-0102-2020-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-08
- Subjects:
- CMOS -- Conversion gain -- Coupling coefficient -- Capacitive cross coupling -- Demodulator -- Down-conversion -- Mixer -- Radio frequency (RF) -- Reconfigurable -- Up-conversion
Microelectronics -- Periodicals
Microélectronique -- Périodiques
Microelectronics
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621.3805 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/5877621.html ↗
http://www.sciencedirect.com/science/journal/00262692 ↗
http://www.intute.ac.uk/sciences/cgi-bin/fullrecord.pl?handle=lesa.1012319367 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.mejo.2020.104830 ↗
- Languages:
- English
- ISSNs:
- 0959-8324
- Deposit Type:
- Legaldeposit
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- British Library DSC - 5758.973000
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