Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes. Issue 14 (6th March 2020)

• Record Type: Journal Article
• Authors: Hagedorn, Sylvia; Walde, Sebastian; Knauer, Arne; Susilo, Norman; Pacak, Daniel; Cancellara, Leonardo; Netzel, Carsten; Mogilatenko, Anna; Hartmann, Carsten; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
• Other Names: Ivanov Sergey guestEditor.; Shubina Tatiana guestEditor.; Jmerik Valentin guestEditor.; Gil Bernard guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 14(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-03-06
• Subjects: AlGaN -- AlN -- epitaxial lateral overgrowths -- high-temperature annealing -- nanopatterned sapphires -- ultraviolet light-emitting diodes; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201901022
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high‐temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated. Abstract : AlGaN‐based light‐emitting diodes with emission in the ultraviolet B (UVB) and ultraviolet C (UVC) spectral range still suffer from a lack of high‐quality substrate material. Herein, an overview of possible approaches to meet this challenge focusing on AlN grown by metal–organic chemical vapor deposition on c ‐plane‐oriented sapphire substrates is provided.