Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements. (July 2020)

• Record Type: Journal Article
• Authors: Sobczak, K.; Borysiuk, J.; Strąk, P.; Jakieła, R.; Koroński, K.; Kaminska, A.; Monroy, E.; Krukowski, S.
• Is Part Of: Micron. Volume 134(2020)
• Publication Date: 2020-07
• Subjects: Nitrides -- Si doping -- Multiple-quantum-well; Microscopy -- Periodicals; Electron Probe Microanalysis -- Periodicals; Microscopy -- Periodicals; Microscopie -- Périodiques; Microscopy; Periodicals; 502.82
• DOI: 10.1016/j.micron.2020.102864
• Languages: English
• ISSNs: 0968-4328

Abstract

Graphical abstract: Highlights: The sensitivity of SSD detector allows the determination of doping in GaN (QW). The use of the AlN as a standard in STEM/EDS allows the quantitative determination of Si doping. Quantifying STEM/EDS studies of Si in GaN area give correct Si dope values. Abstract: A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3 × 10 19 c m - 3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).