Use of Neutron Absorbers to Influence the Neutron Transmutation Doping Process in Silicon. (3rd May 2020)

• Record Type: Journal Article
• Authors: Vande Pitte, J.; Wagemans, J.; Gusarov, A.; Uytdenhouwen, I.; Detavernier, C.; Lauwaert, J.
• Is Part Of: Nuclear technology. Volume 206:Number 5(2020)
• Page Start: 758
• Page End: 765
• Publication Date: 2020-05-03
• Subjects: Neutron absorption -- neutron transmutation doping -- silicon -- resistivity -- cadmium -- hafnium; Nuclear engineering -- Periodicals; Nuclear engineering; Nuclear Physics; Periodicals; Periodicals; 621.48
• DOI: 10.1080/00295450.2019.1697172
• Languages: English
• ISSNs: 1943-7471

Abstract

Abstract: Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.