Grain engineering inducing high energy storage in CdCu3Ti4O12 ceramics. Issue 10 (July 2020) - Peng, Zhanhui
Abstract: ACu3 Ti4 O12 -type ( A C T O ) perovskite ceramics with colossal permittivity always display a low energy storage density since its low breakdown field strength ( E b ). In this work, we designed an effective grain engineering strategy achieving a high energy storage density in CdCu3 Ti4 O12 ( C d C T O ) ceramics via a mixed oxides method based on sol-gel technique. Al2 O3 was selected as grain engineering dopant enhancing E b for achieving the high energy storage density of C d C T O ceramics. Remarkably, at an Al2 O3 doping level of 3.0 wt%, a decent dielectric energy storage performance with a high nonlinear coefficient ( α ) ~ 4.98 and energy storage density ( η ) ~ 1.52 mJ/cm 3 was obtained in C d C T O -3.0 wt% Al2 O3 ceramic. Besides, enhanced E b is strongly associated with the decreased grain size that induced upon Al2 O3 doping. This work not only proposes an effective strategy enhancing E b but also provides new ideas for how to simultaneously achieve a high permittivity and high energy storage density in A C T O dielectric materials. Graphical abstract: Image 1