The realization of insulator-metal transition in a p-type metastable ZnSb by dual-phase nanostructure. (September 2020)

• Record Type: Journal Article
• Authors: Wang, Guoxiang; Chen, Chen; Shi, Haizhou; Chen, Yimin; Shen, Xiang; Lotnyk, Andriy
• Is Part Of: Scripta materialia. Number 186(2020)
• Page Start: 163
• Page End: 168
• Publication Date: 2020-09
• Subjects: Thin films -- High-angle annular dark field (HAADF) -- Scanning/transmission electron microscopy (STEM) -- Diffusion -- Microstructure; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2020.05.034
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract : Insulator-metal transition (IMT) in a metastable phase of ZnSb-based films has been explored systematically. It is found that the reduction of thickness contributes to the precipitation of metastable structure and induces a wide controllable temperature span for the presence of metastable ZnSb phase, resulting in thickness dependent IMT of p-type ZnSb film during annealing process. The metastable structure can be obtained without any void generation after erbium-filling by the formation of crystalline/crystalline dual-phase nanostructure, which can improve the electrical transport and trigger IMT behavior with the temperature of 430 °C, providing a strategy for realizing multi-level data storage. Graphical abstract: Image, graphical abstract