Cite
HARVARD Citation
Kumar, V. et al. (2020). Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions. Materials science in semiconductor processing. p. . [Online].
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Kumar, V. et al. (2020). Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions. Materials science in semiconductor processing. p. . [Online].