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HARVARD Citation
Hou, P. et al. (n.d.). Ionization effect and displacement effect induced photoresponsivity degradation on α-In2Se3 based transistors for photodetectors. Radiation physics and chemistry. p. . [Online].
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Hou, P. et al. (n.d.). Ionization effect and displacement effect induced photoresponsivity degradation on α-In2Se3 based transistors for photodetectors. Radiation physics and chemistry. p. . [Online].