Colossal current and voltage tunability in an organic memristor via electrode engineering. (June 2020)

• Record Type: Journal Article
• Authors: Goswami, Sreetosh; Thompson, Damien; Williams, R. Stanley; Goswami, Sreebrata; Venkatesan, T.
• Is Part Of: Applied materials today. Volume 19(2020)
• Publication Date: 2020-06
• Subjects: Memristor -- Redox-active ligand -- Electrode engineering -- In-situ spectroscopy; Materials science -- Periodicals; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1016/j.apmt.2020.100626
• Languages: English
• ISSNs: 2352-9407

Abstract

Abstract: The physicochemical properties of a molecule-metal interface, in principle, can play a significant role in tuning the electronic properties of organic devices. In this report, we demonstrate an electrode engineering approach in a robust, reproducible molecular memristor that enables a colossal tunability in both switching voltage (from 130 mV to 4 V i.e. >2500% variation) and current (by ~6 orders of magnitude). This provides a spectrum of device design parameters that can be "dialed-in" to create fast, scalable and ultralow energy organic memristors optimal for applications spanning digital memory, logic circuits and brain-inspired computing. Graphical abstract: Image, graphical abstract