An implementation of hot-swap circuit with high reliability. (June 2020)

• Record Type: Journal Article
• Authors: Li, Dagang; Li, Zehong; Li, Wei; Fan, Hua; Wang, Ce; Che, Hongrui; Zeng, Xuanhong; Feng, Quanyuan; Heidari, Hadi
• Is Part Of: Microelectronics journal. Volume 100(2020)
• Publication Date: 2020-06
• Subjects: Hot-swap -- Bus transceiver -- High-impedance state -- Schottky diode; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2020.104777
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: For the information transmission and application field of the bus, it is necessary to design a bus transceiver with high reliability and hot-swap ability. In order to achieve this requirement, this paper proposes a novel transceiver circuit with hot-swap structure. This structure effectively improves the transistor utilization efficiency and reduces the chip area on the premise of achieving the hot-swap performance. Furthermore, the traditional Schottky diode is avoided, and the hot-swap circuit proposed in this work can be implemented in any CMOS process. A prototype was fabricated in 0.5 μm CMOS technology, and the measurement results match well with the simulation results show that the chip meets the design requirements.