Cite
HARVARD Citation
Hung, C. et al. (2020). Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application. Solid-state electronics. p. . [Online].
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Hung, C. et al. (2020). Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application. Solid-state electronics. p. . [Online].