Cite
HARVARD Citation
He, Z. et al. (2020). High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate. Carbon. pp. 435-441. [Online].
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He, Z. et al. (2020). High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate. Carbon. pp. 435-441. [Online].