Cite
HARVARD Citation
Igumbor, E. et al. (2020). Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC. Journal of physics and chemistry of solids. p. . [Online].
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Igumbor, E. et al. (2020). Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC. Journal of physics and chemistry of solids. p. . [Online].