Effect of different capacitance matching on negative capacitance FDSOI transistors. (April 2020)

• Record Type: Journal Article
• Authors: Yu, Tianyu; Lü, Weifeng; Zhao, Zhifeng; Si, Peng; Zhang, Kai
• Is Part Of: Microelectronics journal. Volume 98(2020)
• Publication Date: 2020-04
• Subjects: Negative capacitance transistor -- Ferroelectric capacitor -- Capacitance matching -- Fully depleted silicon on insulator transistor; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2020.104730
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: Negative capacitance field-effect transistors (NCFETs) have several advantages over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and are considered to be promising technology for the next generation of integrated circuits nodes. In this study, an NCFET based on fully depleted silicon-on-insulator (FDSOI) technology is investigated using technology computer-aided design (TCAD) simulation. The effects of capacitance matching due to ferroelectric material parameters (coercive field E c, remnant polarization P r) on NCFET are discussed in detail. The simulation results show that good NCFET capacitance matching is closely related to the P r to E c ratio (RPE ), a metric that is defined for the first time. In addition, it is observed that NCFETs with a two-layer ferroelectric structure can effectively adopt the capacitance matching in different operation regions, thereby increasing the on-state current and reducing the off-state current, resulting in higher switching current ratio (ION /IOFF ) than the single-layer counterpart.