Structural investigation of InSe layered semiconductors. (May 2020)

• Record Type: Journal Article
• Authors: Grimaldi, I.; Gerace, T.; Pipita, M.M.; Perrotta, I.D.; Ciuchi, F.; Berger, H.; Papagno, M.; Castriota, M.; Pacilé, D.
• Is Part Of: Solid state communications. Volume 311(2020)
• Publication Date: 2020-05
• Subjects: Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2020.113855
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: During the last decade, III–VI layered semiconductors (GaSe, InSe, GaS, etc.) have emerged as potential candidates for various applications, such as FET and optoelectronic devices. The properties of this class of layered materials are strongly dependent on their structure, and the existence of different polytypes makes it necessary the identification of the structural phase. In this work, we have performed a detailed investigation of the crystal structure and morphology of bulk InSe, by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The combination of the employed techniques allowed to identify the structural phase of InSe samples ( ϵ polytype). Most importantly, we show that only by crossing the information of each technique it is possible to unambiguously discern between similar polytypes. Highlights: Structure and morphology of InSe prepared by Bridgman method have been investigated. XRD, TEM and Raman techniques have been employed to characterize InSe samples. By crossing the information of different techniques, it is possible to unambiguously discern between InSe polytypes.