Novel approach toward hole-transporting layer doped by hydrophobic Lewis acid through infiltrated diffusion doping for perovskite solar cells. (April 2020)

• Record Type: Journal Article
• Authors: Luo, Junsheng; Xia, Jianxing; Yang, Hua; Malik, Haseeb Ashraf; Han, Fei; Shu, Hongyu; Yao, Xiaojun; Wan, Zhongquan; Jia, Chunyang
• Is Part Of: Nano energy. Volume 70(2020)
• Publication Date: 2020-04
• Subjects: Perovskite solar cells -- Hole-transporting layer -- Infiltrated diffusion doping -- High performance -- Stability; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2020.104509
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: In this work, an alternative processing route for doping of hole-transporting layer (HTL) with improved hole extraction and passivation of anionic Pb–I antisite defects at the perovskite/HTL heterojunction is reported for the first time in perovskite solar cells (PSCs), referred as the infiltrated diffusion doping (INDD) method. In INDD processing, HTL is prepared by depositing the hole-transporting material and dopant sequentially in separate steps, involving deposition of the hole-transporting material (PTAA) in the first step, followed by the deposition of novel fluorine-containing hydrophobic Lewis acid dopant (LAD) in the second step, employing an orthogonal solvent with respect to the PTAA. To the best of our knowledge, it is a pioneer approach which replaces traditional blend casting doping technique for HTL. Consequently, the optimized PSC based on LAD doped PTAA by INDD processing shows a champion power conversion efficiency (PCE) of 20.32%, marking a record PCE in PSCs with a single dopant for PTAA reported to date, and superior long-term stability, retaining 93% of their initial efficiency in ambient environment without any encapsulation up to 1500 h. Graphical abstract: Image 1 Highlights: A facile and novel INDD processing has been developed to dope PTAA by LAD. LAD can effectively dope PTAA and passivate Pb–I antisite defects of perovskite. The PSC based on LAD doped PTAA by INDD processing shows a champion PCE of 20.32%. PSC exhibits superior long-term stability retaining 93% of initial efficiency up to 1500 h.