Development of Cu2ZnSnS4 films from a non-toxic molecular precursor ink and theoretical investigation of device performance using experimental outcomes. (15th March 2020)

• Record Type: Journal Article
• Authors: Mora-Herrera, D.; Silva-González, R.; Cancino-Gordillo, F.E.; Pal, Mou
• Is Part Of: Solar energy. Volume 199(2020)
• Page Start: 246
• Page End: 255
• Publication Date: 2020-03-15
• Subjects: Cu2ZnSnS4 films -- Molecular precursor ink -- Chemical synthesis -- Electrical properties -- Single-junction solar cell -- Numerical simulation; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2020.01.077
• Languages: English
• ISSNs: 0038-092X

Abstract

Graphical abstract: Highlights: Kesterite CZTS films were developed using molecular precursor ink. Annealing conditions had significant impact on physical properties of CZTS absorber. Simulation of CZTS solar cell was performed using SCAPS 1D fitting the experimental data. A maximum efficiency of 14.12% has been achieved with VOC = 0.76 V. Abstract: In this paper, we reported a facile and cost effective way to deposit Cu2 ZnSnS4 (CZTS) films using a non-toxic precursor ink and photovoltaic performance of single junction CZTS solar cell by implementing experimentally obtained optical and electrical parameters of our CZTS film in a simulation program known as SCAPS-1D (solar cell capacitance simulator in one dimension). The ink was deposited over glass substrates by drop casting method and the as-deposited films were subjected to thermal annealing at 450 and 500 °C in N2 atmosphere. X-ray diffraction and Raman scattering analysis revealed the polycrystalline nature of CZTS films with tetragonal kesterite phase. The values of optical band gap (Eg ) were found to vary in between 1.26 and 1.41 eV depending on the annealing condition. Hall measurement showed p-type electrical conductivity with good electrical properties, yielding resistivity ( ρ ) in the range of 18.6–1.9 × 10 2 Ω-cm, carrier concentration ( n ) = 6.65 × 10 16 –8.72 × 10 17 cm −3 and mobility (μ ) = 10.6–19.4 cm 2 /Vs. Numerical simulation of CZTS thin film solar cells with CdS buffer layer was modeled through SCAPS-1D using the experimental data of CZTS films obtained in this work. A maximum efficiency of 14.12% was obtained considering all possible defects and radiative recombination which can be occurred under realistic situation.