Improved microwave dielectric properties of novel low-permittivity Sn-doped Ca2HfSi4O12 ceramics. (September 2020)
- Record Type:
- Journal Article
- Title:
- Improved microwave dielectric properties of novel low-permittivity Sn-doped Ca2HfSi4O12 ceramics. (September 2020)
- Main Title:
- Improved microwave dielectric properties of novel low-permittivity Sn-doped Ca2HfSi4O12 ceramics
- Authors:
- Du, Kang
Song, Xiao-Qiang
Zou, Zheng-Yu
Fan, Jun
Lu, Wen-Zhong
Lei, Wen - Abstract:
- Graphical abstract: Highlights: Novel low-permittivity Ca2 HfSi4 O12 microwave dielectric ceramic was investigated. Partial substitution of Sn 4+ for Hf 4+ could reduce εr value and improve Q×f value of Ca2 HfSi4 O12 ceramic. The τf value of Ca2 (Hf1- x Sn x )Si4 O12 ceramics could be controlled to near-zero by CaSnSiO5 second phase. The correlation between phase compositions and microwave dielectric properties of Ca2 (Hf1- x Sn x )Si4 O12 was investigated. Abstract: The phase compositions and microwave dielectric properties of Ca2 (Hf1- x Sn x )Si4 O12 (0 ≤ x ≤ 0.5) were investigated by the solid-state reaction method. A single-phase ceramic with monoclinic structure was formed in the Ca2 (Hf1- x Sn x )Si4 O12 (0 ≤ x ≤ 0.2) ceramic. At 0.25 ≤ x ≤ 0.5, CaSiO3 and CaSnSiO5 second phases appeared. The microwave dielectric properties of a novel Ca2 HfSi4 O12 ceramic ( ε r = 8.1, Q × f = 39, 700 GHz and τ f = ‒12.7 ppm/°C) were obtained. Partial substitution of Sn 4+ for Hf 4+ could reduce its relative permittivity and improve quality factor, and the highest quality factor of 49, 500 GHz was obtained at x = 0.2. The τ f value of Ca2 (Hf1- x Sn x )Si4 O12 ceramics could be controlled to a near-zero value by the CaSnSiO5 second phase when x > 0.3. The optimum microwave dielectric properties ( ε r = 8.0, Q × f = 37, 100 GHz and τ f = ‒7.2 ppm/°C) were achieved in the Ca2 (Hf1- x Sn x )Si4 O12 ( x = 0.4) ceramic.
- Is Part Of:
- Materials research bulletin. Volume 129(2020)
- Journal:
- Materials research bulletin
- Issue:
- Volume 129(2020)
- Issue Display:
- Volume 129, Issue 2020 (2020)
- Year:
- 2020
- Volume:
- 129
- Issue:
- 2020
- Issue Sort Value:
- 2020-0129-2020-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-09
- Subjects:
- Ca2HfSi4O12 ceramic -- Sn4+ substitution for Hf4+ -- Phase composition -- Microwave dielectric properties
Materials -- Periodicals
Crystal growth -- Periodicals
Matériaux -- Périodiques
Cristaux -- Croissance -- Périodiques
Crystal growth
Materials
Periodicals
620.11 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00255408 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.materresbull.2020.110887 ↗
- Languages:
- English
- ISSNs:
- 0025-5408
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.410000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 13371.xml