Growth of SnSe single crystal via vertical vapor deposition method and characterization of its thermoelectric performance. (June 2020)

• Record Type: Journal Article
• Authors: Jin, Min; Tang, Ziqi; Jiang, Jun; Zhang, Rulin; Zhou, Lina; Zhao, Su; Chen, Yuqi; Chen, Yunxia; Wang, Xianghu; Li, Rongbin
• Is Part Of: Materials research bulletin. Volume 126(2020)
• Publication Date: 2020-06
• Subjects: A.SnSee -- B.Single crystal -- C.Vapor deposition method -- D.Thermoelectric property; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2020.110819
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: SnSe crystal is grown by a vertical vapor deposition method. More than thirty single crystal particles were simultaneously obtained. The maximal PF is 5.23 μWcm-1K-2 and lowest ktot is 0.44 Wm-1K-1. SnSe crystal has a largest ZT value ∼1.0 around 800 K. Abstract: In this work, a vertical vapor deposition method was developed to grow SnSe single crystals. More than thirty single crystal particles were simultaneously obtained and the largest size could up to 15 × 15 × 10 mm 3 . The as-grown crystal is tested has nearly Sn: Se = 1: 1 stoichiometric ratio and demonstrates standard orthorhombic Pnma space group at room temperature. Electrical transport measurement shows the present SnSe single crystal has a largest electrical conductivity σ = 39.6 S cm −1 near Pnma- Cmcm phase transition temperature, and the maximum Seebeck coefficient S = 566 μVK -1 is taken place around 580 K. Thermal transport analysis implies SnSe single crystal exhibits a lowest total thermal conductivity ktot =0.44 Wm −1 K −1 near Pnma- Cmcm phase transition. Finally, it is calculated the figure of merit ZT has a largest value ∼1.0 around 800 K that implies SnSe single crystal is a promising middle- temperature TE material.