Inter-trap tunneling in vanadium doped TiO2 sol-gel films. (July 2020)
- Record Type:
- Journal Article
- Title:
- Inter-trap tunneling in vanadium doped TiO2 sol-gel films. (July 2020)
- Main Title:
- Inter-trap tunneling in vanadium doped TiO2 sol-gel films
- Authors:
- Simeonov, S.
Szekeres, A.
Covei, M.
Spassov, D.
Kitin, G.
Predoana, L.
Calderon-Moreno, J.M.
Nicolescu, M.
Preda, S.
Stroescu, H.
Gartner, M.
Zaharescu, M. - Abstract:
- Graphical abstract: Highlights: Sol-gel V doped (0.03–1.2 at. %) anatase TiO2 films are deposited on p-Si substrates. Eog values are within 3.3−2.94 eV showing a decrease with increasing the V content. The charge transport mechanism is non-conduction band electron transport In 77−300 K temperature range the electron transport is through inter-trap tunneling. Acceptor level concentration is in the order of 10 19 cm −3 . Abstract: Multilayered anatase TiO2 films doped with 0.03 and 1.2 at.% vanadium, deposited on p-type Si substrates by the sol-gel layer-by-layer method are studied to reveal the influence of doping on the electrical properties of the films. Undoped TiO2 and doped TiO2 :V films were incorporated in Metal-Insulator-Semiconductor structures and their current-voltage characteristics were measured and analyzed. The specific resistivity is in the order of 10 5 Ohm.cm, decreasing by increasing the electrical field, an evidence of the electron injection in these TiO2 and TiO2 :V films. The current through the films is non-conduction band current limited with trap charge via deep levels with energy distribution in the TiO2 bandgap . In the 77−300 K temperature range the current at high electric fields is carried out by the electron inter-trap tunneling in these TiO2 films.
- Is Part Of:
- Materials research bulletin. Volume 127(2020)
- Journal:
- Materials research bulletin
- Issue:
- Volume 127(2020)
- Issue Display:
- Volume 127, Issue 2020 (2020)
- Year:
- 2020
- Volume:
- 127
- Issue:
- 2020
- Issue Sort Value:
- 2020-0127-2020-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-07
- Subjects:
- Sol-Gel films -- Vanadium doping -- Current-voltage characteristics -- Deep levels -- Charge carrier transport
Materials -- Periodicals
Crystal growth -- Periodicals
Matériaux -- Périodiques
Cristaux -- Croissance -- Périodiques
Crystal growth
Materials
Periodicals
620.11 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00255408 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.materresbull.2020.110854 ↗
- Languages:
- English
- ISSNs:
- 0025-5408
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.410000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 13380.xml