Cd(OH)2@ZnO nanowires thin-film transistor and UV photodetector with a floating ionic gate tuned by a triboelectric nanogenerator. (July 2020)

• Record Type: Journal Article
• Authors: Zheng, Mingli; Yang, Feng; Guo, Junmeng; Zhao, Lei; Jiang, Xiaohong; Gu, Guangqin; Zhang, Bao; Cui, Peng; Cheng, Gang; Du, Zuliang
• Is Part Of: Nano energy. Volume 73(2020)
• Publication Date: 2020-07
• Subjects: TENG -- UV photodetector -- ZnO nanowire Film -- Air discharge; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2020.104808
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: The adsorbed ions on the surface of nanowires thin-film, such as O2 −, are acted as a floating gate, modulating significantly the thin-film's electronic and optoelectronic properties. However, due to the lack of tuning means for surface ions, the floating ionic gate has not been applied in developing electronic and optoelectronic nanodevices. Here, based on the gas discharge induced by a triboelectric nanogenerator (TENG), the tuning of surface ions on Cd(OH)2 @ZnO nanowires thin-film is achieved, and the thin-film transistor (TFT) and thin-film photodetector (TFP) have been fabricated by using the surface ions as a floating ionic gate. In the TFT with a floating ionic gate, the current can be tuned step-by-step as the operation cycles of TENG is controlled, and the maximum on-off ratio of current reaches 4.0 × 10 5 . In the UV light TFP with a floating ionic gate, the on-off ratio and recovery time constant of photocurrent reach 2.7 × 10 7 and 0.53 s, achieving a simultaneous enhancement of sensitivity and recovery speed by a factor of 1350 and 946 times, respectively. O2 − is identified as the surface ions on the nanowire thin-film, and the tuning mechanism has been discussed. Because of the low cost and easy operation of the TENG, the floating ionic gate technology based on TENG provides a promising strategy for developing novel electronic and optoelectronic nanodevices with enhanced performances by constructing a device system. Graphical abstract: This paper demonstrated a novel Cd(OH)2@ZnO nanowires thin-film transistor (TFT) and thin film photodetector (TFP) based on the TENG-based SIG technology. The current on-off ratio of SIG-TFT and the sensitivity, photocurrent gain, on-off ratio and recovery time constant of the SIG-UV-TFP are achieved as 10 5 and 1.3 × 10 4 W/A, 4.1 × 10 4, 2.7 × 10 7 and 0.53 s, respectively. Image 1 Highlights: The tuning of surface ions on Cd(OH)2 @ZnO nanowires thin-film is achieved based on the gas discharge induced by a TENG. The current of the TFT can be tuned step-by-step, and the maximum on-off ratio of current reaches 4.0 × 10 5 . The on-off ratio and recovery time constant of photocurrent reach 2.7 × 10 7 and 0.53 s, respectively. The floating ionic gate technology based on TENG are promising for novel electronic and optoelectronic nanodevices.