Planar Growth, Integration, and Applications of Semiconducting Nanowires. Issue 27 (20th November 2019)

• Record Type: Journal Article
• Authors: Sun, Ying; Dong, Taige; Yu, Linwei; Xu, Jun; Chen, Kunji
• Is Part Of: Advanced materials. Volume 32:Issue 27(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-11-20
• Subjects: arrangement and integration -- inorganic semiconducting nanowires -- nanowire electronics -- planar self‐assembly growth; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201903945
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high‐performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More‐than‐Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line‐shape of NWs on planar or out‐of‐plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in‐plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line‐shape engineering are reviewed, followed by their latest device applications in building high‐performance field‐effect transistors, photodetectors, stretchable electronics, and 3D stacked‐channel integration. Abstract : Precise location, orientation, and layout controls of self‐assembled semiconducting nanowires, grown or transferred on planar substrates, are indispensable capabilities to accomplish scalable electronic device integration. The latest technologies developed for achieving orderly in‐plane guided growth, transferring, and integration of inorganic nanowires are reviewed, followed by a summary of their device applications in logic applications, photodetectors, stretchable electronics, and 3D stacked‐channel integration.