Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters. Issue 7 (20th May 2020)

• Record Type: Journal Article
• Authors: Volodin, Vladimir A.; Kamaev, Gennadiy N.; Vergnat, Michel
• Is Part Of: Physica status solidi. Volume 14:Issue 7(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-05-20
• Subjects: Ge nanoclusters -- germanosilicate glasses -- memristors -- negative photoconductivity; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202000165
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n + ‐Si(100) substrate by co‐evaporation of GeO2 and SiO powders in ultra‐high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light‐stimulated recharging of holes originating from Ge‐nanoclusters, which act as traps. Abstract : Metal–insulator–semiconductor (MIS) structures ITO/GeO[SiO]/n + ‐Si(100) with amorphous Ge nanoclusters in insulator film are fabricated and studied. Memristor effect and negative photoconductivity are observed in the MIS structure when negative voltage bias is applied to the top indium tin oxide (ITO) electrode. This can be used for development of light‐operating memristor.