Fluorinated indium‐gallium‐zinc oxide thin‐film transistor with reduced vulnerability to hydrogen‐induced degradation. Issue 6 (7th June 2020)

• Record Type: Journal Article
• Authors: Wang, Sisi; Li, Jiapeng; Shi, Runxiao; Xia, Zhihe; Lu, Lei; Kwok, Hoi Sing; Wong, Man
• Is Part Of: Journal of the Society for Information Display. Volume 28:Issue 6(2020)
• Page Start: 520
• Page End: 527
• Publication Date: 2020-06-07
• Subjects: fluorination -- hydrogen -- indium‐gallium‐zinc oxide -- integration -- thin‐film transistors; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.914
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: Thin‐film transistors (TFTs) based on amorphous indium‐gallium‐zinc oxide channels with or without fluorination were fabricated. The sensitivity of their electrical characteristics to hydrogen exposure was compared. It is shown that TFTs built with fluorinated channels exhibit significantly improved intrinsic resistance against hydrogen‐induced degradation; hence, they are potentially better suited for integration with hydrogen‐containing devices such as photo‐diodes based on amorphous hydrogenated silicon and TFTs based on low‐temperature polycrystalline silicon. The observed improvement correlates well with a reduced population of oxygen‐related defects and reduced hydrogen incorporation in the fluorinated channels. Abstract : Thin‐film transistors (TFTs) based on fluorinated amorphous indium‐gallium‐zinc oxide (IGZO:F) channels exhibit improved intrinsic resistance against hydrogen‐induced degradation. The observed improvement correlates well with a reduced population of oxygen‐related defects and reduced hydrogen incorporation in the IGZO:F channels. The reduced vulnerability is beneficial to the monolithic integration of IGZO:F TFTs with other hydrogen‐containing active devices such as photodiodes based on hydrogenated amorphous silicon and TFTs based on low‐temperature polycrystalline silicon (LTPS).